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Freescale Semiconductor Technical Data
Document Number: MW7IC2240N Rev. 0, 11/2007
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. Typical Performance * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., Full Frequency Band (2110 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 30 dB Power Added Efficiency -- 14% ACPR @ 5 MHz Offset -- - 50 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power * Pout @ 1 dB Compression Point = 40 Watts CW * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
2110 - 2170 MHz, 4 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2240NR1
CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2240GNR1
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2240NBR1
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout/VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation (1)
13 12
NC GND
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +5 32, +0 - 65 to +150 150 225 20 Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case 4 W Avg. (Pout = 3.95 W Avg., Case Temperature = 68C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 40 W Avg. (Pout = 39.4 W Avg., Case Temperature = 80C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA Symbol RJC 3.9 1.3 Value (2,3) Unit C/W
3.2 1.2
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum)
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2 RF Device Data Freescale Semiconductor
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) Stage 1 -- Dynamic Characteristics (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Stage 2 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 -- Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. Part internally matched both on input and output. (continued) Crss Coss -- -- 0.67 205 -- -- pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 7 0.2 2 2.8 9.8 0.39 2.7 -- 12.5 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Ciss -- 50 -- pF VGS(th) VGS(Q) VGG(Q) 1.2 -- 9.5 2 2.9 13 2.7 -- 16.5 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Power Added Efficiency Adjacent Channel Power Ratio Input Return Loss Gps PAE ACPR IRL 28 12 -- -- 30 14 - 50 - 16 33 -- - 46 - 12 dB % dBc dB W MHz -- 10 --
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110 - 2170 MHz Pout @ 1 dB Compression Point, CW P1dB -- 40 -- Video Bandwidth @ 40 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 40 W CW Average Group Delay @ Pout = 40 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 40 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) VBW
GF Delay G P1dB
-- -- -- -- -- --
0.1 1.08 1.98 18.3 0.05 0.004
-- -- -- -- -- --
dB ns dB/C dBm/C
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 4 RF Device Data Freescale Semiconductor
+ C23 VDD2 VDD1 C4 RF INPUT C6 1 2 3 4 5 6 C1 VGG1 VGG2 R1 R2 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C3 C5 C7 Microstrip x 0.055 Taper Microstrip Microstrip Microstrip Microstrip Microstrip Z8 Z9 Z10 Z11 Z12, Z13 PCB 0.204 x 0.083 Microstrip 0.273 x 0.083 Microstrip 0.176 x 0.083 Microstrip 0.364 x 0.083 Microstrip 0.564 x 0.083 Microstrip Arlon Cuclad 250GX - 0300 - 55 - 22, 0.030, r = 2.5 C18 7 NC 8 9 10 11 NC C9 Quiescent Current Temperature Compensation Z13 13 12 C11 C13 C15 C21 C22 C17 NC NC NC NC 14 Z4 DUT 16 15 Z12 C8 Z5 Z6 Z7 Z8 C16 Z9 Z10 Z11 RF OUTPUT C10 C12 C14 C19 C20
Z1
Z2
Z3
2.197 0.016 0.106 0.409 0.161 0.254 0.388
x 0.083 x 0.083 x 0.055 x 0.322 x 0.322 x 0.322 x 0.123
Figure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part C1 C2, C16 C3, C14, C15 C4, C5, C19, C20, C21, C22 C6, C7, C10, C11 C8, C9 C12, C13 C17 C18 C23 R1, R2 Description 8.2 pF Chip Capacitor 0.4 pF Chip Capacitors 4.7 F, 50 V Chip Capacitors 10 F, 50 V Chip Capacitors 5.6 pF Chip Capacitors 0.3 pF Chip Capacitors 0.1 F Chip Capacitors 0.6 pF Chip Capacitor 6.8 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 10 K, 1/4 W Chip Resistors Part Number ATC100B8R2BT250XT ATC700B0R4BT500XT GRM31CR71H475KA12L GRM55DR61H106KA88B ATC100B5R6BT250XT ATC700B0R3BT500XT C1206C104K5RAC ATC100B0R6BT250XT ATC100B6R8BT250XT 477KXM063M CRCW12061001FKEA Manufacturer ATC ATC Murata Murata ATC ATC Kemet ATC ATC Illinois Vishay
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 5
C23
C10 C12 C14 C4 C19 C6 CUT OUT AREA C8 C9 C17 C18 C16 C20
C2 MW7IC2240N Rev. 2a C3 C1 R1 VGG1 R2 C5
C7
C21 C11 C13 C15
C22
Figure 4. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%) -4 -8 ACPR (dBc) -12 -16 -20 -24 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%) -4 -8 -12 -16 -20 -24 10 Pout, OUTPUT POWER (WATTS) PEP 32 31.8 31.6 Gps, POWER GAIN (dB) 31.4 31.2 31 30.8 30.6 30.4 30.2 30 2060 2080 2100 2120 2140 2160 2180 2200 IRL ACPR-L PAE Gps ACPR-U VDD = 28 Vdc, Pout = 4 W (Avg.) IDQ1 = 90 mA, IDQ2 = 420 mA Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 16 15 14 13 -47 -48 -49 -50 -51 -52 -53 2220
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 4 Watts Avg.
31.6 31.4 31.2 Gps, POWER GAIN (dB) 31 30.8 30.6 30.4 30.2 30 29.8 29.6 2060 2080 2100 2120 2140 2160 2180 2200 IRL ACPR-L PAE Gps ACPR-U 26 25 24 23 VDD = 28 Vdc, Pout = 10 W (Avg.) -38 IDQ1 = 90 mA, IDQ2 = 420 mA Single-Carrier W-CDMA 3.84 MHz -39 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) -40 -41 -42 -43 -44 2220
f, FREQUENCY (MHz)
Figure 6. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 10 Watts Avg.
33 IDQ2 = 630 mA 32 Gps, POWER GAIN (dB) 31 30 29 28 27 26 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 420 mA 315 mA 210 mA 525 mA Gps, POWER GAIN (dB) 34 33 32 31 30 29 28 27 26 1 45 mA VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 100 IDQ1 = 135 mA 112.5 mA 90 mA 67.5 mA
Figure 7. Two - Tone Power Gain versus Output Power @ IDQ1 = 90 mA
Figure 8. Two - Tone Power Gain versus Output Power @ IDQ2 = 420 mA
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
-10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing IDQ2 = 210 mA 630 mA -40 525 mA -50 135 mA -10 VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
-20
-20
-30
315 mA
-30
IDQ1 = 45 mA 67.5 mA 112.5 mA
-40
-50
135 mA
90 mA
-60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
-60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
Figure 9. Third Order Intermodulation Distortion versus Output Power @ IDQ1 = 90 mA
-10 VDD = 28 Vdc, IDQ1 = 90 mA IDQ2 = 420 mA, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 10. Third Order Intermodulation Distortion versus Output Power @ IDQ2 = 420 mA
-10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-20
-20
VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 90 mA IDQ2 = 420 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3-U IM3-L
-30
-30
-40
3rd Order 5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
-40 IM7-U -50 IM7-L
IM5-U IM5-L
-50
-60
-60 1 10 TWO-TONE SPACING (MHz) 100
Figure 11. Intermodulation Distortion Products versus Output Power
54 53 52 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 51 50 49 48 47 46 45 44 43 11 12 13 14 VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2140 MHz 15 16 17 18 19 20 21 22 Actual P1dB = 46.23 dBm (42 W) P3dB = 57.22 dBm (52.76 W) P6dB = 47.77 dBm (59.84 W) Ideal 38 36 34 32 30 28 26 24 22 20 1 PAE Gps
Figure 12. Intermodulation Distortion Products versus Tone Spacing
50 TC = -30_C 25_C 85_C 25_C 85_C PAE, POWER ADDED EFFICIENCY (%) -30_C 45 40 35 30 25 20 VDD = 28 Vdc IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz 10 Pout, OUTPUT POWER (WATTS) CW 15 10 5 100
Pin, INPUT POWER (dBm)
Figure 13. Pulsed CW Output Power versus Input Power
Figure 14. Power Gain and Power Added Efficiency versus CW Output Power
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
32 31 Gps, POWER GAIN (dB) 30 29 28 27 26 25 0 10 20 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) CW VDD = 24 V 26 2060 2080 2100 2120 2140 2160 28 V 32 V IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz Gps, POWER GAIN (dB) 36 TC = -30_C
34
32
25_C
30 85_C 28 IDQ1 = 90 mA IDQ2 = 420 mA Pout = 15 W 2180 2200 2220
f, FREQUENCY (MHz)
Figure 15. Power Gain versus Output Power
109
Figure 16. Power Gain versus Frequency
108 MTTF (HOURS)
1st Stage
107
2nd Stage
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 14%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 17. MTTF versus Junction Temperature
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 9
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 4 W Pout Input Signal -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 18. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 19. Single - Carrier W - CDMA Spectrum
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 10 RF Device Data Freescale Semiconductor
Zo = 50 Zin f = 2060 MHz f = 2220 MHz
f = 2220 MHz Zload
f = 2060 MHz
VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zin = Zin W 48.171 + j6.940 52.454 + j11.553 55.468 + j8.729 56.312 + j12.000 58.860 + j9.463 57.596 + j11.427 59.603 + j10.690 56.867 + j10.012 58.144 + j9.805 Zload W 6.868 - j9.687 6.432 - j8.942 6.051 - j8.216 5.729 - j7.545 5.444 - j6.869 5.193 - j6.201 4.958 - j5.578 4.743 - j4.969 4.577 - j4.353
Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 20. Series Equivalent Input and Load Impedance MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 11
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 255C, 50 Ohm System)
f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 S11 |S11| 0.452 0.407 0.354 0.316 0.279 0.222 0.140 0.046 0.094 0.238 0.254 0.241 0.252 0.201 0.174 0.148 0.135 0.197 0.244 0.291 0.340 0.391 0.435 0.475 0.455 0.535 0.571 0.598 0.623 0.643 0.668 0.681 0.694 0.712 0.724 0.726 0.705 0.743 0.748 0.753 134 117 96.5 85.1 68 49.5 30.4 21.9 135 56.4 - 29.2 - 84.1 - 120 - 142 - 162 168 103 35.4 1.73 - 11.1 - 19 - 26.9 - 35.2 - 44.4 - 46 - 60.2 - 71.2 - 82 - 92.9 - 102 - 109 - 116 - 121 - 124 - 127 - 130 - 130 - 132 - 135 - 137 |S21| 0.356 0.757 1.430 2.330 3.690 5.800 9.570 17.000 33.600 58.300 47.800 34.300 27.700 23.900 21.100 18.800 15.800 12.600 11.100 10.400 9.750 9.230 8.760 8.290 7.050 6.690 5.980 5.170 4.370 3.690 3.100 2.580 2.130 1.760 1.440 1.170 0.928 0.780 0.652 0.555 S21 7.81 - 7.8 - 31 - 52.1 - 73.6 - 93.3 - 113 - 137 - 173 124 59.5 22.9 - 3.98 - 28.2 - 51.8 - 75.9 - 100 - 118 - 132 - 147 - 163 - 179 164 146 129 112 95.1 78.5 63.1 48.7 35.4 22.7 11 - 0.057 - 10.9 - 21.1 - 28.7 - 37 - 44.3 - 50.3 |S12| 0.001 0.000 0.000 0.001 0.001 0.002 0.003 0.004 0.007 0.009 0.006 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.002 0.002 0.002 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 S12 - 108 - 67.7 - 65.8 - 27.1 - 43.4 - 21.9 - 24.8 - 33.7 - 41.8 - 86.4 - 118 - 122 - 125 - 128 - 130 - 131 - 139 - 155 - 156 - 157 - 147 - 150 - 144 - 137 - 90.2 - 106 - 103 - 96.5 - 103 - 96.2 - 106 - 107 - 87.9 - 96.1 - 99.6 - 82.4 - 66.9 - 77.2 - 88 - 78.6 |S22| 0.979 0.969 0.955 0.935 0.909 0.878 0.833 0.737 0.476 0.396 0.873 0.927 0.911 0.891 0.878 0.872 0.882 0.906 0.919 0.926 0.933 0.938 0.942 0.945 0.950 0.955 0.955 0.954 0.955 0.954 0.951 0.952 0.957 0.959 0.959 0.962 0.963 0.959 0.955 0.955 S22 160 157 154 151 148 143 137 124 91.7 - 79.7 - 149 - 171 - 179 177 175 175 175 174 173 171 170 169 168 166 166 164 163 162 162 161 161 161 160 160 160 159 159 158 157 156
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 12 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 255C, 50 Ohm System) (continued)
f MHz 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.759 0.765 0.770 0.774 0.780 0.795 0.810 0.821 0.839 0.855 0.862 - 140 - 144 - 148 - 153 - 159 - 164 - 170 - 175 - 178 179 176 |S21| 0.486 0.440 0.401 0.370 0.338 0.306 0.273 0.239 0.207 0.178 0.156 S21 - 56.1 - 62.4 - 69.7 - 77.4 - 85.1 - 93.2 - 101 - 107 - 111 - 114 - 116 |S12| 0.004 0.004 0.004 0.005 0.006 0.006 0.008 0.008 0.008 0.008 0.008 S12 - 81.1 - 82 - 85.9 - 96.4 - 94.9 - 99.3 - 110 - 113 - 112 - 117 - 123 |S22| 0.954 0.946 0.941 0.941 0.940 0.933 0.928 0.934 0.936 0.927 0.935 S22 155 154 153 151 150 148 146 145 144 144 144
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 14 RF Device Data Freescale Semiconductor
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MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 16 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 17
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 18 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 19
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 20 RF Device Data Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 21
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 22 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2007 * Initial Release of Data Sheet Description
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 23
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MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
Rev. 24 0, 11/2007 Document Number: MW7IC2240N
RF Device Data Freescale Semiconductor

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